On October 17, Hongqi announced the first 1700V ultra-high-voltage silicon carbide power device prototype. It was designed by the Power Electronics Development Department of the New Energy Development Institute of the General R&D Institute.
Details of what exactly has been produced are quite sketchy. Reports merely refer to it as a power device and say that it is equipped with a domestic 1700V automotive-grade ultra-high-voltage silicon carbide chip. It uses dielectric-strength packaging materials packed in a structure to withstand high voltages and other technologies. Reportedly, the maximum bus voltage of the device can reach 1200V.
The main advantages of such a system are its high efficiency and low energy loss. What this ultimately means for the car is that it reduces power consumption and thereby increases overall range. The Hongqi announcement appears to be accompanied by a lot of marketing spin, with FAW saying that it lays a solid foundation for adopting electrical architecture above 1000V and that it can deliver 5-minute rapid charging.
Hongqi has combined the silicon carbide power device with a high-density cell parallel connection, short-channel cell structure design, high-through-current copper clamp interconnection, and aΒ high-temperature-resistant silver sintering process.
Currently, several Chinese producers offer cars based on 800V platforms. Nioβs new Onvo brand uses 900V architecture, including motors and batteries.
It is unlikely that Hongqi will be able to put out a 1700V system for a number of years at the earliest.
Silicon carbide is currently the best technological solution for high-voltage systems. Such voltages strain systems such as the traction inverter, AC system, and charger. Silicon carbideβs properties make it highly suitable for such uses. This makes it possible to create smaller, lighter modules, which helps to keep costs down. Furthermore, higher operation voltages mean that thinner and lighter cables can be used in the system. Β
Sources: Fast Technology, IT House,
